| PART |
Description |
Maker |
| MHW9236 |
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| MRF6S19060N |
1930鈥?990 MHz, 12 W Avg., 28 V, 2 x N鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| MRF5P21240 |
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel Broadband RF Power MOSFET
|
Motorola
|
| MRF9200LR306 MRF9200LSR3 MRF9200LR3 |
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF6S21100N |
MRF6S21100NBR1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
|
MOTOROLA
|
| MRF7S19100N |
1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
|
Motorola Semiconductor Products
|
| MRF5S21150 |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF7S21170H |
2110?2170 MHz, 50 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
|
Motorola Semiconductor Products
|
| MRF6S23100H MRF6S23100HR306 MRF6S23100HR3 MRF6S231 |
RF Power Field Effect Transistors
2300??400 MHz, 20 W Avg., 28 V, 2 x W??DMA Lateral N??hannel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF5S19090LSR3 MRF5S19090LR3 |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
|
FREESCALE SEMICONDUCTOR INC
MOTOROLA[Motorola, Inc]
|
| PT76S8 PT76S81 |
75A Avg 800 Volts
|
Nihon Inter Electronics Corporation
|
| PDT20116 PDT201161 |
150A Avg 800 Volts
|
Nihon Inter Electronics Corporation
|
